1/5 T620-600W t630-600w ? september 2001 - ed: 1a snubberless triac symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tc= 100c 6 a i tsm non repetitive surge peak on-state current (t j initial = 25c ) tp = 16.7 ms (1 cycle, 60 hz) 66 a tp=10ms (1/2 cycle, 50 hz) 75 i 2 t i 2 t value (half-cycle, 50 hz) tp=10ms 28 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500 ma di g /dt=1a/ m s. repetitive f=50hz 20 a/ m s non repetitive 100 t stg t j storage temperature range operating junction temperature range -40to+150 -40to+125 c tl maximum lead temperature for soldering during 10s at 4.5 mm from case 260 c absolute ratings (limiting values) isowatt220ab (plastic) n i trms =6a n v drm =v rrm = 600v n excellent switching performances n insulating voltage = 1500v (rms) n u.l. recognized : e81734 features symbol parameter value unit v drm v rrm repetitive peak off-state voltage t j = 125 c 600 v the T620-600W and t630-600w triacs use high performance glass passivated chip technology, housed in a fully molded plastic isowatt220ab package. the snubberless tm concept offers suppres- sion of r-c network, and is suitable for applica- tions such as phase control and static switch on inductive and resistive loads. description a1 a2 g a 1 a 2 g
T620-600W / t630-600w 2/5 p g (av) =1w p gm =10w(tp=20 m s) i gm =4a(tp=20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 50 c/w rth(j-c) junction to case for a.c (360 conduction angle) 3.4 c/w thermal resistances symbol test conditions quadrant t620 t630 unit i gt v d =12v (dc) r l =33 w tj= 25c i-ii-iii max 20 30 ma v gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii max 1.5 v v gd v d =v drm r l =3.3k w tj= 125c i-ii-iii min 0.2 v tgt v d =v drm i g = 500ma dl g /dt= 3a m s tj= 25c i-ii-iii typ 2 m s i h * i t = 100ma gate open tj= 25 c max 35 50 v tm * i tm = 8.5a tp= 380 m s tj= 25 c max 1.5 v i drm i rrm vdrm rated v rrm rated tj= 25c max 10 m a tj= 125c max 2 ma dv/dt * linear slope up to v d =67%v drm gate open tj= 125 c min 200 300 v/ m s (dv/dt)c * (di/dt)c = 3.3 a/ms (see note) tj= 125 c min 10 20 v/ m s * for either polarity of electrode a2 voltage with reference to electrode a1. note : in usual applications where (di/dt)c is below 3.3 a/ms, the (dv/dt)c is always lower than 10v/ m s, and, therefore, it is unnecessary to use a snuber r-c network accross t620w / t630w triacs. electrical characteristics
T620-600W / t630-600w 3/5 0123456 0 2 4 6 8 180 o =180 o =120 o =90 o =60 o =30 o t(rms) i(a) p(w) fig.1 : maximum power dissipation versus rms on-state current. 0 102030405060708090100110120130 0 1 2 3 4 5 6 7 =180 o tcase( c) o i(a) t(rms) fig.3 : rms on-state current versus case temper- ature. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. p (w) 0 102030405060708090100110120130 0 2 4 6 8-95 -100 -105 -110 -115 -120 -125 rth=0 c/w 2.5 c/w 5c/w 10 c/w o o o o tamb(c) o tcase ( c) o fig.2 : correlation between maximum power dissi- pation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth(j-c) zth(j-a) tp(s) fig.4 : thermal transient impedance junction to case and junction to ambient versus pulse dura- tion. 110100 1000 0 10 20 30 40 50 60 70 tj initial = 25 c o number of cycles i(a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles.
T620-600W / t630-600w 4/5 i(a).i 2 t(a 2 s) tsm 110 1 10 100 1000 tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp a 10ms, and corresponding value of i 2 t. 00.511.522.533.544.555.5 0.1 1 10 100 i(a) tm tj initial 25 c o tj max tj max vto =0.9v rt =0.062 v(v) tm fig.8 : on-state characteristics (maximum val- ues).
T620-600W / t630-600w 5/5 package mechanical data isowatt220ab information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 b 2.50 2.70 0.098 0.106 d 2.50 2.75 0.098 0.108 e 0.40 0.70 0.016 0.028 f 0.75 1.00 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.40 2.70 0.094 0.106 h 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l3 28.60 30.60 1.125 1.205 l4 9.80 10.60 0.386 0.417 l6 15.90 16.40 0.626 0.646 l7 9.00 9.30 0.354 0.366 diam 3.00 3.20 0.118 0.126 n cooling method : c n marking : type number n weight : 2.1g n recommended torque value : 0.55 m.n. n maximum torque value : 0.70 m.n.
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